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Si4908DY
Vishay Siliconix
Dual N-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
40
R DS(on) ( Ω )
0.060 at V GS = 10 V
0.070 at V GS = 4.5 V
I D (A) a
5.0
4.7
Q g (Typ.)
5.6
? Halogen-free According to IEC 61249-2-21
Available
? TrenchFET ? Power MOSFET
? 100 % R g Tested
APPLICATIONS
? CCFL Inverter
SO- 8
D 1
D 2
S 1
G 1
S 2
1
2
3
8
7
6
D 1
D 1
D 2
G 2
4
5
D 2
G 1
G 2
Top V ie w
Orderin g Information: Si490 8 DY-T1-E3 (Lead (P b )-free)
Si490 8 DY-T1-GE3 (Lead (P b )-free and Halogen-free)
S 1
N -Channel MOSFET
S 2
N -Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
40
± 16
5
Unit
V
Continuous Drain Current (T J = 150 °C)
T C = 70 °C
T A = 25 °C
T A = 70 °C
I D
4.7
4.1 b, c
3.3 b, c
Pulsed Drain Current (10 μs Pulse Width)
Source-Drain Current Diode Current
Pulsed Source-Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
T C = 25 °C
T A = 25 °C
L = 0.1 mH
I DM
I S
I SM
I AS
E AS
20
2.3
1.5 b, c
20
7
2.5
A
T C = 25 °C
2.75
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
1.75
1.85 b, c
W
T A = 70 °C
1.18 b, c
Operating Junction and Storage Temperature Range
T J , T stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typ.
Max.
Unit
Maximum Junction-to-Ambient b, d
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady-State
R thJA
R thJF
57
35
67.5
45
°C/W
Notes:
a. Based on T C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 120 °C/W.
Document Number: 73698
S09-0540-Rev. B, 06-Apr-09
www.vishay.com
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